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| Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.00.3 3.50.2 For power amplification with high forward current transfer ratio 7.20.3 0.80.2 3.00.2 1.00.2 q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 80 100 60 80 6 6 3 1 15 1.3 150 -55 to +150 Unit V 10.0 -0. +0.3 s Features 1.10.1 0.750.1 0.850.1 0.40.1 2.30.2 4.60.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1754 2SD1754A 2SD1754 Symbol VCBO VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.50.2 2.00.2 7.00.3 Unit: mm 0 to 0.15 3.00.2 10.20.3 1.0 max. Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature V A A A 2.30.2 0.750.1 1.10.1 2.5 0.5 max. 0.90.1 0 to 0.15 1 2 3 W C C 4.60.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current 2SD1754 2SD1754A (TC=25C) Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 30 60 80 500 1500 1 V MHz min typ max 100 100 100 100 Unit A A A V Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1754 2SD1754A VCEO hFE* VCE(sat) fT Forward current transfer ratio Collector to emitter saturation voltage Transition frequency *h FE Rank classification Q P Rank hFE 500 to 1000 800 to 1500 2.50.2 1.0 emitter voltage 2SD1754A V 7.20.3 2.50.2 1.0 1 Power Transistors PC -- Ta 20 1.0 (1) TC=Ta (2) Without heat sink (PC=1.3W) IB=1.2mA 1mA TC=25C 2SD1754, 2SD1754A IC -- VCE 5 IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 15 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 0.1mA 0 Collector current IC (A) (1) 0.8 4 TC=100C 3 25C -25C 10 2 5 1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=40 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C 25C -25C 10000 hFE -- IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC VCE=12V f=10MHz TC=25C Forward current transfer ratio hFE 25C -25C 300 100 30 10 3 1 0.01 0.03 1000 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 TC=100C 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) Collector current IC (A) 10 I CP 3 1 10ms 0.3 0.1 0.03 0.01 1 3 10 30 IC 300ms t=1ms 102 (1) (2) 10 1 2SD1754A 2SD1754 100 300 1000 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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